What factors determine the NAND-type flash memory?(2)

What factors determine the NAND-typeflash memory?

 

Write performance

NAND-type flash memory into the write steps: sending the addressing information transmitted to the data page → Register → → send command data from the register write information page. Which is a command cycle, we are following their merger and addressing cycle, but the two parts is not continuous. K9K1G08U0M need to write a page: 5 commands, addressing cycle × 50ns + (512 +16) × 50ns +200 μs = 226.7μs. K9K1G08U0M actually write transfer rate: 512 bytes ÷ 226.7μs = 2.2MB / s. K9K4G08U0M need to write a page: 6 command, address cycle × 50ns + (2K +64) × 50ns +300 μs = 405.9μs. K9K4G08U0M actually write transfer rate: 2112 bytes / 405.9μs = 5MB / s. Therefore, the use of 2KB page size increases the capacity of more than 512-byte page write performance more than twice.

 

Block size

block erase operation is the basic unit, as each block erase time is almost the same (erase operation usually takes 2ms, while the number of cycles before the command and address information takes time to be negligible), the capacity of the block will directly determine the erase performance. Large-capacity NAND-typeflash memory capacity to improve the page, and each block also increased the number of pages, the general capacity of 4Gb chip block 2KB × 64 个 page = 128KB, 1Gb chip is 512 bytes × 32 个 page = 16KB. It can be seen at the same time, the former for the latter wiping 8 times the speed!